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FDC642P Datasheet P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDC642P July 1999 FDC642P P-Channel 2.5V Specified PowerTrenchTM.

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Key Features

  • • • • • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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